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Proceedings Paper

Sol-gel erbium-doped silica-hafnia planar and channel waveguides
Author(s): Rogeria Rocha Goncalves; Giovanni Carturan; Luca Zampedri; Maurizio Ferrari; Cristina Armellini; Alessandro Chiasera; M. Mattarelli; Enrico Moser; Maurizio Montagna; Giancarlo C. Righini; Stefano Pelli; Gualtiero Nunzi Conti; Sidney J. L. Ribeiro; Younes Messaddeq; Antonio Minotti; Vittorio Foglietti; Herve Portales
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Paper Abstract

Erbium activated SiO2-HfO2 planar waveguides, doped with Er3+ concentrations ranging from 0.01 to 4 mol%, were prepared by sol-gel method. The films were deposited on v-SiO2 and silica-on-silicon substrates using dip-coating technique. The waveguides show high densification degree, effective intermingling of the two film components, and uniform surface morphology. The waveguide deposited on silica-on-silicon substrates shows one single propagation mode at 1.5μm, with a confinement coefficient of 0.81 and an attenuation coefficient of 0.8 dB/cm at 632.8nm. Emission in the C-telecommunication band was observed at room temperature for all the samples upon continuous-wave excitation at 980 nm or 514.5 nm. The shape of the emission band corresponding to the 4I13/24I15/2 transition is found to be almost independent both on erbium content and excitation wavelength, with a FWHM between 44 and 48 nm. The 4I13/2 level decay curves presented a single-exponential profile, with a lifetime ranging between 1.1-6.6 ms, depending on the erbium concentration. Infrared to visible upconversion luminescence upon continuous-wave excitation at 980 nm was observed for all the samples. Channel waveguide in rib configuration was obtained by etching the active film in order to have a well confined mode at 1.5 μm.

Paper Details

Date Published: 17 June 2003
PDF: 10 pages
Proc. SPIE 4990, Rare-Earth-Doped Materials and Devices VII, (17 June 2003); doi: 10.1117/12.478340
Show Author Affiliations
Rogeria Rocha Goncalves, Univ. degli Studi di Trento (Italy)
Giovanni Carturan, Univ. degli Studi di Trento (Italy)
Luca Zampedri, Istituto di Fotonica e Nanotechnologie-CNR (Italy)
Maurizio Ferrari, Istituto di Fotonica e Nanotechnologie-CNR (Italy)
Cristina Armellini, Istituto di Fotonica e Nanotechnologie-CNR (Italy)
Alessandro Chiasera, Univ. degli Studi di Trento (Italy)
INFM (Italy)
M. Mattarelli, Univ. degli Studi di Trento (Italy)
INFM (Italy)
Enrico Moser, Univ. degli Studi di Trento (Italy)
INFM (Italy)
Maurizio Montagna, Univ. degli Studi di Trento (Italy)
INFM (Italy)
Giancarlo C. Righini, Istituto di Fisica Applicata Nello Carrara-CNR (Italy)
Stefano Pelli, Istituto di Fisica Applicata Nello Carrara-CNR (Italy)
Gualtiero Nunzi Conti, Istituto di Fisica Applicata Nello Carrara-CNR (Italy)
Sidney J. L. Ribeiro, Univ. Estadual Paulista (Brazil)
Younes Messaddeq, Univ. Estadual Paulista (Brazil)
Antonio Minotti, Istituto di Fotonica e Nanotecnologies-CNR (Italy)
Vittorio Foglietti, Istituto di Fotonica e Nanotechnologies-CNR (Italy)
Herve Portales, Univ. degli Studi di Padova (Italy)


Published in SPIE Proceedings Vol. 4990:
Rare-Earth-Doped Materials and Devices VII
Shibin Jiang; Jacques Lucas, Editor(s)

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