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Proceedings Paper

Reverse-biased characteristics of GaAs/AlGaAs depleted optical thyristor with low depletion voltage
Author(s): Woon-Kyung Choi; Doo-Gun Kim; Young-Wan Choi; Seok Lee; Deokha Woo; Young Tae Byun; Jae Hun Kim; Sun-Ho Kim
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Paper Abstract

For the faster switching speed and the lower power consumption, we optimized the structure of a fully depleted optical thyristor (DOT) by the depletion of charge at the lower negative voltage. The fabricated optical thyristor shows sufficient nonlinear s-shape I-V characteristics with the switching voltage of 2.85 V and the complete depletion voltage of -8.73 V. In this paper, using a finite difference method (FDM), we calculate the effects of parameters such as doping concentration and thickness of each layer to determine the optimized structure in the view of the fast and low-power-consuming operation.

Paper Details

Date Published: 25 July 2003
PDF: 10 pages
Proc. SPIE 4986, Physics and Simulation of Optoelectronic Devices XI, (25 July 2003); doi: 10.1117/12.478321
Show Author Affiliations
Woon-Kyung Choi, Chung-Ang Univ. (South Korea)
Doo-Gun Kim, Chung-Ang Univ. (South Korea)
Young-Wan Choi, Chung-Ang Univ. (South Korea)
Seok Lee, Korea Institute of Science and Technology (South Korea)
Deokha Woo, Korea Institute of Science and Technology (South Korea)
Young Tae Byun, Korea Institute of Science and Technology (South Korea)
Jae Hun Kim, Korea Institute of Science and Technology (South Korea)
Sun-Ho Kim, Korea Institute of Science and Technology (South Korea)


Published in SPIE Proceedings Vol. 4986:
Physics and Simulation of Optoelectronic Devices XI
Marek Osinski; Hiroshi Amano; Peter Blood, Editor(s)

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