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Proceedings Paper

Direct thin film imaging (DTFI) based on PMOD (photochemical metal-organic deposition) methodology
Author(s): Harold O. Madsen; Seigi Suh; Leo G. Svendsen; Shyama P. Mukherjee; Paul J. Roman Jr.; Michael A. Fury; Katy Ip
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Paper Abstract

Considerable difficulties and limitations are associated with the patterning of thick photoresist layers to generate high aspect ratio features in MEMS fabrication. Moreover, a large number of steps is needed to achieve the patterned MEMS structures. The PMOD methodology takes advantage of direct patterning of a photoimageable, highly etch resistant inorganic metal oxide precursor to form the hard mask. A spin coated thin TiO2 film deposited onto a Novolac transfer layer has been evaluated. An etch ratio of 850:1 between Novolac resin and TiO2 thin-film has been achieved by oxygen gas RIE. One set of process parameters demonstrated vertical sidewalls on 10 m thick Novolac using a 20 nm patterned TiO2 thin-film. Photo resolution of the TiO2 films as small as 0.5 m has been demonstrated using a contact aligner. In addition to applying our process to silicon substrates, we have also demonstrated the feasibility of patterning on ceramic alumina substrates. The plasma-etch residues and the PMOD film were removed by wet chemical cleaning solutions developed at EKC Technology.

Paper Details

Date Published: 15 January 2003
PDF: 10 pages
Proc. SPIE 4979, Micromachining and Microfabrication Process Technology VIII, (15 January 2003); doi: 10.1117/12.478292
Show Author Affiliations
Harold O. Madsen, EKC Technology, Inc. (United States)
Seigi Suh, EKC Technology, Inc. (United States)
Leo G. Svendsen, EKC Technology, Inc. (United States)
Shyama P. Mukherjee, EKC Technology, Inc. (United States)
Paul J. Roman Jr., EKC Technology, Inc. (United States)
Michael A. Fury, EKC Technology, Inc. (United States)
Katy Ip, EKC Technology, Inc. (United States)

Published in SPIE Proceedings Vol. 4979:
Micromachining and Microfabrication Process Technology VIII
John A. Yasaitis; Mary Ann Perez-Maher; Jean Michel Karam, Editor(s)

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