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Proceedings Paper

Fabrication of PZT-actuated cantilevers on silicon-on-insulator wafers for rf microswitches
Author(s): Hong Wen Jiang; Paul B. Kirby; Qi Zhang
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Paper Abstract

A processing scheme for fabricating Pb(ZrxTi1-x)O3 thin film actuated silicon cantilevers using silicon-on-insulator wafers is described. Such piezoelectrically actuated cantilevers are being investigated for RF microswitches. The microswitch design specification requires the Pb(ZrxTi1-x)O3 thin film to be at least 1μm thick to achieve the adequate deflection at an operating voltage of 10V. A two-stage dry-wet etching process was developed to reliably pattern the 1μm Pb(ZrxTi1-x)O3 film. To release the Pb(ZrxTi1-x)O3 cantilevers on silicon-on-insulator wafers it is necessary to perform deep silicon etching from both sides of the wafer. The Pb(ZrxTi1-x)O3 thin film was prepared by sol-gel method. The piezoelectric coefficient d31 was calculated as 14pC/N.

Paper Details

Date Published: 15 January 2003
PDF: 9 pages
Proc. SPIE 4979, Micromachining and Microfabrication Process Technology VIII, (15 January 2003); doi: 10.1117/12.478245
Show Author Affiliations
Hong Wen Jiang, Cranfield Univ. (United Kingdom)
Paul B. Kirby, Cranfield Univ. (United Kingdom)
Qi Zhang, Cranfield Univ. (United Kingdom)


Published in SPIE Proceedings Vol. 4979:
Micromachining and Microfabrication Process Technology VIII
John A. Yasaitis; Mary Ann Perez-Maher; Jean Michel Karam, Editor(s)

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