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Proceedings Paper

New mask format for low-energy electron-beam proximity projection lithography
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Paper Abstract

In order to solve the various problems associated with a LEEPL mask as originally demonstrated in the form of single-membrane diamond mask, we propose a new mask format termed COSMOS (complementary stencil mask on strut-supports). The COSMOS has small-area membranes with strut reinforcement and is somewhat similar to the masks used for other types of electron projection lithography (EPL). However, the exposure strategy is completely different from the other EPLs; a complete pattern image can be transcribed by overlaying complementary portions of a mask pattern via multiple exposures. The inter-membrane and intra-membrane distortions of image placement have been computed by the finite element method (FEM) simulation. It is concluded that the global distortion induced by the inversion of gravity can be corrected for by mask writing, and the intra-membrane distortion, induced by both the gravitational flexure of a membrane and the pattern density distribution, can be neglected with the membrane intrinsic stress of approximately 5 Mpa..

Paper Details

Date Published: 1 August 2002
PDF: 10 pages
Proc. SPIE 4754, Photomask and Next-Generation Lithography Mask Technology IX, (1 August 2002); doi: 10.1117/12.477009
Show Author Affiliations
Kaoru Koike, Sony Corp. (Japan)
Shinji Omori, Sony Corp. (Japan)
Kazuya Iwase, Sony Corp. (Japan)
Isao Ashida, Sony Corp. (Japan)
Shigeru Moriya, Sony Corp. (Japan)


Published in SPIE Proceedings Vol. 4754:
Photomask and Next-Generation Lithography Mask Technology IX
Hiroichi Kawahira, Editor(s)

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