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Proceedings Paper

Comparing photomask and wafer post-develop defect formation
Author(s): Adam Smith; William A. Aaskov; Stephen E. Knight; Robert K. Leidy; Andrew J. Watts
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Paper Abstract

The reduction of post-develop defects in photomask making is significantly more critical than in wafer processing. While wafers can afford to experience some level of defect density, photomasks are required to be defect free. Defect density learning in photomask making is expensive and time-consuming given the material and exposure time costs. In a wafer fab, it is much easier to run factorial experiments to get large amounts of data in a short amount of time. Some photomask making and wafer processing defect generation mechanisms are the same. Here a study of the formation of resist material residues during develop will be compared between photomask and wafer processing. Wafer processing experience will provide insight into photomask post-develop defect formation. Several options for the elimination of this defect type will be discussed. Differences in implementation strategies between photomask makers and wafer lithographers will also be discussed.

Paper Details

Date Published: 1 August 2002
PDF: 6 pages
Proc. SPIE 4754, Photomask and Next-Generation Lithography Mask Technology IX, (1 August 2002); doi: 10.1117/12.477006
Show Author Affiliations
Adam Smith, IBM Microelectronics Div. (United States)
William A. Aaskov, IBM Microelectronics Div. (United States)
Stephen E. Knight, IBM Microelectronics Div. (United States)
Robert K. Leidy, IBM Microelectronics Div. (United States)
Andrew J. Watts, IBM Microelectronics Div. (United States)


Published in SPIE Proceedings Vol. 4754:
Photomask and Next-Generation Lithography Mask Technology IX
Hiroichi Kawahira, Editor(s)

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