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Proceedings Paper

Feasibility study of TaSiOx-type Att-PSM for 157-nm lithography
Author(s): Kunio Watanabe; Osamu Yamabe; Noriyoshi Kanda; J. Kim; Noboru Uchida; Shigeo Irie; Toshifumi Suganaga; Toshiro Itani
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Paper Abstract

TaSiOx is expected to be the most effective film material for use in attenuated phase shifting masks (Att-PSMs), in terms of both its durability under irradiation and its lithographic performance in 157-nm lithography. In this study, we optimized the transmittance of 5.5 percent and evaluated the effectiveness of TaSiOx by both aerial image simulation and exposure experiment in order to evaluate the material's potential for 157 nm lithography. Through the aerial image simulation, it was confirmed that aerial image intensity of side lobes was less than half of that needed for resolving patterns by transmittance of 5.5 percent. In an exposure experiment, the resolution, depth of focus (DOF), and mask error enhancement factor (MEEF) were evaluated for hole patterns. The result of this evaluation was that we were able to fabricate a pattern of 100-nm diameter isolated holes without side lobes and obtain a better than 200-nm DOF and MEEF greater than three with a 5.5 percent TaSiOx type Att-PSM. This study has confirmed that TaSiOx type Att-PSMs have strong potential for application in the fabrication of 100-nm hole patterns by 157-nm lithography.

Paper Details

Date Published: 1 August 2002
PDF: 8 pages
Proc. SPIE 4754, Photomask and Next-Generation Lithography Mask Technology IX, (1 August 2002); doi: 10.1117/12.477000
Show Author Affiliations
Kunio Watanabe, Semiconductor Leading Edge Technologies, Inc. (Japan)
Osamu Yamabe, Semiconductor Leading Edge Technologies, Inc. (Japan)
Noriyoshi Kanda, Semiconductor Leading Edge Technologies, Inc. (Japan)
J. Kim, Semiconductor Leading Edge Technologies, Inc. (Japan)
Noboru Uchida, Semiconductor Leading Edge Technologies, Inc. (Japan)
Shigeo Irie, Semiconductor Leading Edge Technologies, Inc. (Japan)
Toshifumi Suganaga, Semiconductor Leading Edge Technologies, Inc. (Japan)
Toshiro Itani, Semiconductor Leading Edge Technologies, Inc. (Japan)


Published in SPIE Proceedings Vol. 4754:
Photomask and Next-Generation Lithography Mask Technology IX
Hiroichi Kawahira, Editor(s)

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