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Proceedings Paper

Data processing for LEEPL mask: splitting and placement correction
Author(s): Isao Ashida; Shinji Omori; Hidetoshi Ohnuma
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Paper Abstract

We have been developing a practical mask-data processing system for low-energy electron-beam proximity-projection lithography (LEEPL), a promising candidate for the next generation lithography. Several problems inherent to the unique mask structure for LEEPL have been solved in principle. In this paper, the overview of the system is demonstrated, with special focus on the corrections for the possible violation of complementary splitting on the boundary of neighboring data-processing units as well as the image placement error due to mask distortion.

Paper Details

Date Published: 1 August 2002
PDF: 10 pages
Proc. SPIE 4754, Photomask and Next-Generation Lithography Mask Technology IX, (1 August 2002); doi: 10.1117/12.476997
Show Author Affiliations
Isao Ashida, Sony Corp. (Japan)
Shinji Omori, Sony Corp. (Japan)
Hidetoshi Ohnuma, Sony Corp. (Japan)


Published in SPIE Proceedings Vol. 4754:
Photomask and Next-Generation Lithography Mask Technology IX
Hiroichi Kawahira, Editor(s)

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