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Proceedings Paper

In-situ optical emission spectroscopic examination of chrome etch for photomasks
Author(s): Rex Anderson; Nicole L. Sandlin; Melisa J. Buie; Clyde Su; Ashish Agarwal; Cynthia J. Brooks; Yi-Chiau Huang; Brigitte C. Stoehr
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Paper Abstract

In this paper, optical emission spectroscopy is used to characterize and monitor chrome etch processes on the Etec Tetra photomask etch chamber. Changes in process conditions, such as source power, bias power, pressure, and gas flows have been captured by time-averaged optical emission traces. Using multi-wavelength OES data collected during chrome etching, a fingerprint of the plasma was taken. The fingerprint was generated using a principal component analysis (PCA) technique, which detects spectral correlation between multiple wavelengths. The PCA reduces the dimensionality of the multi-wavelength OES and extracts just the most relevant information. The new variables are created as linear combinations of the original variables. The new principal component peaks diminish more than the original peaks, allowing strong endpoint detection for a 1 percent chrome-loaded mask.

Paper Details

Date Published: 1 August 2002
PDF: 11 pages
Proc. SPIE 4754, Photomask and Next-Generation Lithography Mask Technology IX, (1 August 2002); doi: 10.1117/12.476993
Show Author Affiliations
Rex Anderson, Applied Materials, Inc. (United States)
Nicole L. Sandlin, Applied Materials, Inc. (United States)
Melisa J. Buie, Applied Materials, Inc. (United States)
Clyde Su, Photronics-PSMC (Taiwan)
Ashish Agarwal, Applied Materials, Inc. (United States)
Cynthia J. Brooks, Applied Materials, Inc. (United States)
Yi-Chiau Huang, Applied Materials, Inc. (United States)
Brigitte C. Stoehr, Applied Materials, Inc. (United States)


Published in SPIE Proceedings Vol. 4754:
Photomask and Next-Generation Lithography Mask Technology IX
Hiroichi Kawahira, Editor(s)

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