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Proceedings Paper

Simulation of transmittance on the effect of resolution enhancement of 100-nm pattern with attenuated phase-shifting mask in 193-nm lithography
Author(s): Cheng-Ming Lin
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Paper Abstract

Compared to normal transmittance attenuated phase-shifting mask (AttPSM), the higher transmittance AttPSM in clear-field masks has higher electric field amplitude with 180 degrees phase-shift for 0.1 micrometers isolated line. Due to the stronger interference with the higher electric field amplitude under the edge of line pattern with 180 degrees phase-shifting, the resolution of aerial image of 0.1 micrometers isolated line increased with the increasing of transmittance. Under dipole illumination (sigma) c 0.6 and (sigma) r 0.3, and NA 0.75, the T percent of AttPSM about 22 percent could provide the better normalized image log-slope of 0.1 micrometers isolated and semi-dense line pattern at focus -0.10 micrometers . When the layout of the 0.1 micrometers pitch and isolated contact pattern is designed as a dark-tone mask, the contrast of the aerial image increased with increasing T percent of AttPSM. The side-lobe could be avoided under the design of dark-tone mask. However, if the contact pattern is designed as a dark-tone mask, a negative resist is necessary. The combination of dark-tone mask, high-transmittance AttPSM and negative resist could provide better contrast of the aerial image and resolution of the 0.1 micrometers contact-hole pattern in 193 nm lithography.

Paper Details

Date Published: 1 August 2002
PDF: 7 pages
Proc. SPIE 4754, Photomask and Next-Generation Lithography Mask Technology IX, (1 August 2002); doi: 10.1117/12.476986
Show Author Affiliations
Cheng-Ming Lin, Taiwan Semiconductor Manufacturing Co., Ltd. (Taiwan)

Published in SPIE Proceedings Vol. 4754:
Photomask and Next-Generation Lithography Mask Technology IX
Hiroichi Kawahira, Editor(s)

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