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Proceedings Paper

Optimization of Alt-PSM structure for 100-nm node ArF lithography: II
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Paper Abstract

Alternating phase-shifting mask (Alt-PSM) has been often viewed as one of the most practical techniques for 100nm-and-below node lithography. Among the various mask structures of the Alt-PSMs, the 'single trench with undercut structure', which has a phase shifting trench with side- etching, has been in frequent use of 130nm-node KrF lithography. It is because this structure has good optical characteristics, and it has some advantages in productivity compared with other mask structures. However, when the 'single trench with undercut' type Alt-PSM is applied to the 100nm-and-below node ArF lithography, the narrow chrome line width restricts the undercut width and limits the lithographic performance. Therefore a new structure is required.

Paper Details

Date Published: 1 August 2002
PDF: 14 pages
Proc. SPIE 4754, Photomask and Next-Generation Lithography Mask Technology IX, (1 August 2002); doi: 10.1117/12.476981
Show Author Affiliations
Kei Mesuda, Dai Nippon Printing Co., Ltd. (Japan)
Nobuhito Toyama, Dai Nippon Printing Co., Ltd. (Japan)
Syogo Narukawa, Dai Nippon Printing Co., Ltd. (Japan)
Yasutaka Morikawa, Dai Nippon Printing Co., Ltd. (Japan)
Hiroshi Mohri, Dai Nippon Printing Co., Ltd. (Japan)
Naoya Hayashi, Dai Nippon Printing Co., Ltd. (Japan)
Morihisa Hoga, Dai Nippon Printing Co., Ltd. (Japan)


Published in SPIE Proceedings Vol. 4754:
Photomask and Next-Generation Lithography Mask Technology IX
Hiroichi Kawahira, Editor(s)

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