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Proceedings Paper

Assessment of mask quality assurance method of critical layers with high MEEF
Author(s): Hiroyuki Ishida; Michihide Tanaka; Yasuhiro Mizuma; Tetuya Kitagawa; Akihiro Ogura
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Paper Abstract

Currently, the wafer design rule is being reduced, and 130-100nm Lithography process development being accelerated. The specification of the mask quality assurance for 130-100nm lithography is about in the process of being fixed. It is commonly said that a 150nm Pixel grid is small enough for 130nm generation mask inspection. But We don't yet have verification results concerning whether the spec is adequate enough or not. This time, we had an experiment that at mask incoming inspection, KLA detect as repeating defect even through the mask shop inspection. We feed back this results to mask shop, and find out the route cause. Then we establish the assurance method for current and next generation mask inspection. We realized that the current mask inspection spec for each generation might not be adequate enough.

Paper Details

Date Published: 1 August 2002
PDF: 4 pages
Proc. SPIE 4754, Photomask and Next-Generation Lithography Mask Technology IX, (1 August 2002); doi: 10.1117/12.476980
Show Author Affiliations
Hiroyuki Ishida, Sony Semiconductor Kyusyu Corp. (Japan)
Michihide Tanaka, Sony Semiconductor Kyusyu Corp. (Japan)
Yasuhiro Mizuma, Sony Semiconductor Kyusyu Corp. (Japan)
Tetuya Kitagawa, Sony Corp. (Japan)
Akihiro Ogura, Sony Corp. (Japan)

Published in SPIE Proceedings Vol. 4754:
Photomask and Next-Generation Lithography Mask Technology IX
Hiroichi Kawahira, Editor(s)

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