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Proceedings Paper

Improvements in MoSi EAPSM CD bias and iso-dense linearity plasma etch results utilizing design of experiments process optimization of Gen III ICP plasma source
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Paper Abstract

A continuous improvement study of the Gen III ICP MoSi etch process is accomplished through the use of high resolution factorial experimental design (DOE). The main goal of this work is to more fully characterize the process space within a commercial GEN III MoSi plasma etch process reactor. Particular emphasis is placed upon the improvement of CD bias loss as well as isolated/dense feature linearity within the same mask pattern. CD uniformity is also monitored as well as MoSi etch profile. Several novel etchant gases are exported prior to the Designed Experiment to characterize the effect of alternate chemistries on MoSi etch performance; these results are reported. The Designed Experiment was utilized to optimize the most promising alternate gas chemistry in terms of CD performance, MoSi Etch Rate uniformity and Selectivity to Quartz. The novel gases included a known polymerizing etch gas as well as etch rate enhancement gases which have also historically been used within the silicon process industry to enhance selectivity to silicon dioxide and presumably, quartz.

Paper Details

Date Published: 1 August 2002
PDF: 12 pages
Proc. SPIE 4754, Photomask and Next-Generation Lithography Mask Technology IX, (1 August 2002); doi: 10.1117/12.476973
Show Author Affiliations
Jason Plumhoff, Unaxis USA, Inc. (United States)
Chris Constantine, Unaxis USA, Inc. (United States)
J. Shin, Unaxis USA, Inc. (United States)
Emmanuel Rausa, Unaxis USA, Inc. (United States)


Published in SPIE Proceedings Vol. 4754:
Photomask and Next-Generation Lithography Mask Technology IX
Hiroichi Kawahira, Editor(s)

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