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Proceedings Paper

Characteristics of residues and optical change of HT PSM during stepwise wet cleaning and optimization of HT PSM cleaning process
Author(s): Woo-Gun Jeong; Dae-Woo Kim; Chang-Min Park; Ki-Won An; Dong-Heok Lee; Jin-Min Kim; Sang-Soo Choi; Soo Hong Jeong
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Paper Abstract

A method of PSM cleaning has been developed and its cleaning performance was studied by changing H2SO4 / H2O2 mixture(SPM) and diluted standard cleaning-1 (SC-1) chemical ratio and controlling phase and transmittance of KrF HT PSM, within ±3° and ±0.3 percent respectively. The type of residue was scrutinized using KLA-Tencor SL3UV and scanning electron microscopy (SEM) during stepwise process and cleaning. X-ray photoelectron spectroscopy (XPS) was also employed to characterize the residues on the HT PSM surface. Diluted HF (DHF) and DHF/H2O2 mixture (FPM) were introduced to etch off the remaining defects on quartz after MoSiON dry etch process and also compared their results with the gas assisted etching (GAE) repair. It has turned out that DHF, FPM and GAE repair removed the remaining defects on quartz respectively. Our results demonstrate that approach of stepwise process inspection is very effective at identifying defects and their sources as they become evident at different process steps. Finally it was shown that diluted SC-1 with quick dump method followed by the direct displacement IPA dry is promising for the improvement of HT PSM cleaning efficiency and its residual impurities and causes no damage on the MoSiON surface. It is found that efficient and effective conventional chemical treatment, direct displacement IPA dry and GAE repair would be considered to be the integrated sequence to control the smallest particles for the HT PSM.

Paper Details

Date Published: 1 August 2002
PDF: 9 pages
Proc. SPIE 4754, Photomask and Next-Generation Lithography Mask Technology IX, (1 August 2002); doi: 10.1117/12.476970
Show Author Affiliations
Woo-Gun Jeong, PKL (South Korea)
Dae-Woo Kim, PKL (South Korea)
Chang-Min Park, PKL (South Korea)
Ki-Won An, PKL (South Korea)
Dong-Heok Lee, PKL (South Korea)
Jin-Min Kim, PKL (South Korea)
Sang-Soo Choi, PKL (South Korea)
Soo Hong Jeong, PKL (South Korea)

Published in SPIE Proceedings Vol. 4754:
Photomask and Next-Generation Lithography Mask Technology IX
Hiroichi Kawahira, Editor(s)

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