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Proceedings Paper

Advanced pattern correction method for fabricating highly accurate reticles
Author(s): Shunichiro Sato; Masaaki Koyama; Mikio Katsumata; Ichiro Kagami; Hiroichi Kawahira
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Paper Abstract

We have investigated a new pattern correction method for reducing pattern critical dimension (CD) errors due to a variety of pattern layouts and densities. Together with conventional proximity effect correction and fogging functions in an electron beam (EB) writing process, the new pattern correction was introduced for correcting CD errors that occur during a dry etching process. A rule-based OPC software was used to modify EB pattern shapes. In addition to the spaces between neighboring patterns, the surrounding pattern density was chosen as a correction parameter. First, we optimized the pattern correction table by measuring the CDs of various symmetric 3 lines with 5 levels of surrounding pattern densities. Next, we applied the pattern correction to semi real device patterns. From the measurement for 100 patterns of them, CD uniformity of 15.0 nm (3-sigma) was obtained. We confirmed the effectiveness of the pattern correction method.

Paper Details

Date Published: 1 August 2002
PDF: 9 pages
Proc. SPIE 4754, Photomask and Next-Generation Lithography Mask Technology IX, (1 August 2002); doi: 10.1117/12.476964
Show Author Affiliations
Shunichiro Sato, Sony Corp. (Japan)
Masaaki Koyama, Sony Corp. (Japan)
Mikio Katsumata, Sony Corp. (Japan)
Ichiro Kagami, Sony Corp. (Japan)
Hiroichi Kawahira, Sony Corp. (Japan)

Published in SPIE Proceedings Vol. 4754:
Photomask and Next-Generation Lithography Mask Technology IX
Hiroichi Kawahira, Editor(s)

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