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Proceedings Paper

Required performances of reticle inspection system for ArF lithography through analysis of defect printability study
Author(s): Byung Gook Kim; Keishi Tanaka; Nobuyuki Yoshioka; Naohisa Takayama; Keiichi Hatta; Shingo Murakami; Masao Otaki
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Paper Abstract

Semiconductor industry still inspect reticle with the i-line wavelength and ITRS indicates only minimum defect size corresponds to 20 percent of the pattern size on mask in the same light. Currently defect definition, however, varies from the fixed minimum defect size to non-printable-maximum defect size due to increased reticle cost. This paper provides an investigation of requirements of current inspection system 193nm lithography. The lines and contact holes patterns were also investigated by both simulation and experiment. The printability of defects was observed under the various circumstances such as pitch variation and transmission of halftone film. From the defect printability study we found that defect printability behave non-linearly as the exposure condition varies and the size defect should be treated importantly as the ArF lithography extends till 70nm era. It is also understood that there is a possibility to miss the important meaning of the size defects from the simple definition of reticle defect. From the analysis of various types of defects and exposure conditions we suggested detail level of inspection sensitivity that new reticle inspection system should be ready.

Paper Details

Date Published: 1 August 2002
PDF: 9 pages
Proc. SPIE 4754, Photomask and Next-Generation Lithography Mask Technology IX, (1 August 2002); doi: 10.1117/12.476960
Show Author Affiliations
Byung Gook Kim, Semiconductor Leading Edge Technologies, Inc. (Japan)
Keishi Tanaka, Semiconductor Leading Edge Technologies, Inc. (Japan)
Nobuyuki Yoshioka, Semiconductor Leading Edge Technologies, Inc. (Japan)
Naohisa Takayama, NEC Corp. (Japan)
Keiichi Hatta, NEC Corp. (Japan)
Shingo Murakami, NEC Corp. (Japan)
Masao Otaki, Toppan Printing Co., Ltd. (Japan)


Published in SPIE Proceedings Vol. 4754:
Photomask and Next-Generation Lithography Mask Technology IX
Hiroichi Kawahira, Editor(s)

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