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Proceedings Paper

Applications of multiple-wavelength absorption endpoint system in photomask dry etcher
Author(s): Dong-Soo Min; Pil-Jin Jang; Hyuk-Joo Kwon; Boo-Yeon Choi; Soo-Hong Jeong
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Paper Abstract

Recently dry etcher system is a key process technology in preparation of photomask for next generation microelectronic device and endpoint detection system is an important part of the dry etch process, because mask CD control of Cr mask is more critical issues than before. In this paper, we describe real time endpoint system which is operated by optical emission multiple wavelength absorption for dry etch process of binary photomask. The end point detection system absorbs optical emission signal in real time, using optical cable from plasm chamber in dry etcher, and the signal is absorbed 200-800nm wavelength for a lot of grating manufactured by etch angel. The signal detects endpoint of process by association of one or several wavelength. We have tested newly developed EPD system and installed at PKLs dry etcher system, using various open area Cr mask with ZEP70000 resist. This study showed that multiple wavelength absorption technique is enough to detect endpoint down to 2 percent Cr loading masks and the EPD signal reproducibility was within 2 percent of EPD time at the same patterned masks.

Paper Details

Date Published: 1 August 2002
PDF: 9 pages
Proc. SPIE 4754, Photomask and Next-Generation Lithography Mask Technology IX, (1 August 2002); doi: 10.1117/12.476953
Show Author Affiliations
Dong-Soo Min, PKL (South Korea)
Pil-Jin Jang, PKL (South Korea)
Hyuk-Joo Kwon, PKL (South Korea)
Boo-Yeon Choi, PKL (South Korea)
Soo-Hong Jeong, PKL (South Korea)

Published in SPIE Proceedings Vol. 4754:
Photomask and Next-Generation Lithography Mask Technology IX
Hiroichi Kawahira, Editor(s)

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