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Proceedings Paper

Etching selectivity and surface profile of attenuated phase-shifting mask using CF4/O2/He inductively coupled plasma (ICP)
Author(s): Si-Yeul Yoon; Se-Jong Choi; Yong-Dae Kim; Dong-Hyuk Lee; Han-Sun Cha; Jin-Min Kim; Sang-Soo Choi; Soo Hong Jeong
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Paper Abstract

The selectivity and etched profile of MoSiON in high-density CF4/O2/He inductively coupled plasma (ICP) have been studied. The etched profiles of MoSiON along with the quartz surface morphologies were investigated as a function of etching parameters by scanning electron microscopy (SEM). We varied pressure from 5 mtorr to 20 mtorr and CF4 flow rate from 15 sccm to 40 sccm. A smooth quartz surface and a vertical MoSiON slope were observed under 10 sccm CF4, 15 sccm of O2 flow rate, -240 V of DC bias and 5 mtorr pressure. And the other conditions showed rough quartz surface and bad MoSiON slope. Only at the appropriate CF4/O2 Flow rate, high vapor pressure compounds inhibits nonuniform quartz etching.

Paper Details

Date Published: 1 August 2002
PDF: 9 pages
Proc. SPIE 4754, Photomask and Next-Generation Lithography Mask Technology IX, (1 August 2002); doi: 10.1117/12.476952
Show Author Affiliations
Si-Yeul Yoon, PKL (South Korea)
Se-Jong Choi, PKL (South Korea)
Yong-Dae Kim, PKL (South Korea)
Dong-Hyuk Lee, PKL (South Korea)
Han-Sun Cha, PKL (South Korea)
Jin-Min Kim, PKL (South Korea)
Sang-Soo Choi, PKL (South Korea)
Soo Hong Jeong, PKL (South Korea)


Published in SPIE Proceedings Vol. 4754:
Photomask and Next-Generation Lithography Mask Technology IX
Hiroichi Kawahira, Editor(s)

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