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Proceedings Paper

CAR dry etching technology to produce 0.13 um reticle
Author(s): W. Z. Chou; Fei-Gwo Tsai; C. C. Tuo; Chue San Yoo; T. S. Tsai; Lawrence Shue
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Paper Abstract

Process optimizations have been done to carried out xon '0.13micrometers ' reticle manufacturing with feature sizes of under 520nm. Micro-leading < 10nm and CD uniformity (3S) < 10nm process for binary Cr reticle can be achieved with dry etching process using chemical amplify resists blanks. HL-950 writer with resist films of 400nm and dy etching with Centura system were adopted for the purpose. It has shown that by optimizing selectivity window in Centura system without assistant gas addition, one could improve the process capability significantly. Design of experiment was applied to investigating the effects of source power, bias power and total pressure on CD uniformity, Micro-loading, Linearity and Process bias. With the DOE results, the process conditions could be fine-tuned to an optimal set of variables, which allow us to manufacture 0.13 micrometers masks.

Paper Details

Date Published: 1 August 2002
PDF: 9 pages
Proc. SPIE 4754, Photomask and Next-Generation Lithography Mask Technology IX, (1 August 2002); doi: 10.1117/12.476951
Show Author Affiliations
W. Z. Chou, Taiwan Semiconductor Manufacturing Co., Ltd. (Taiwan)
Fei-Gwo Tsai, Taiwan Semiconductor Manufacturing Co., Ltd. (Taiwan)
C. C. Tuo, Taiwan Semiconductor Manufacturing Co., Ltd. (Taiwan)
Chue San Yoo, Taiwan Semiconductor Manufacturing Co., Ltd. (Taiwan)
T. S. Tsai, Taiwan Semiconductor Manufacturing Co., Ltd. (Taiwan)
Lawrence Shue, Taiwan Semiconductor Manufacturing Co., Ltd. (Taiwan)


Published in SPIE Proceedings Vol. 4754:
Photomask and Next-Generation Lithography Mask Technology IX
Hiroichi Kawahira, Editor(s)

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