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Proceedings Paper

Early mask results of KRS-XE and current progress in improving sensitivity and etch resistance
Author(s): Christina Deverich; Andrew J. Watts; Paul A. Rabidoux; Thomas J. Cardinali; William A. Aaskov; Peter Levin; Wu-Song Huang; Wayne M. Moreau; Marie Angelopoulos; Karen E. Petrillo; David Madeiros
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Paper Abstract

KRS-XE is a chemically amplified resist developed to enable electron-beam lithography for mask making at the 100nm node. This material has been shown to provide an excellent process window for mask manufacturing at this node. Characterization of this material using both 50keV raster and 75keV vector scan e-beam exposure systems will be presented. A higher sensitivity version of this material has been developed specifically for a vector, shaped beam 50keV application. Initial mask manufacturing results for this higher sensitivity version of KRS-XE will be presented for 75keV. In addition, recent developments using KRS-XE formulations modified to achieve high sensitivity and improved etch resistance will be discussed.

Paper Details

Date Published: 1 August 2002
PDF: 12 pages
Proc. SPIE 4754, Photomask and Next-Generation Lithography Mask Technology IX, (1 August 2002); doi: 10.1117/12.476946
Show Author Affiliations
Christina Deverich, IBM Microelectronics Div. (United States)
Andrew J. Watts, IBM Microelectronics Div. (United States)
Paul A. Rabidoux, IBM Microelectronics Div. (United States)
Thomas J. Cardinali, IBM Microelectronics Div. (United States)
William A. Aaskov, IBM Microelectronics Div. (United States)
Peter Levin, IBM Microelectronics Div. (United States)
Wu-Song Huang, IBM Microelectronics Div. (United States)
Wayne M. Moreau, IBM Microelectronics Div. (United States)
Marie Angelopoulos, IBM Thomas J. Watson Research Ctr. (United States)
Karen E. Petrillo, IBM Thomas J. Watson Research Ctr. (United States)
David Madeiros, IBM Thomas J. Watson Research Ctr. (United States)


Published in SPIE Proceedings Vol. 4754:
Photomask and Next-Generation Lithography Mask Technology IX
Hiroichi Kawahira, Editor(s)

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