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Proceedings Paper

Fogging and pattern loading effect by writing strategy
Author(s): Junsik S. Cho; Seung Hee Baek; Kyung-Han Nam; H. J. Cho; Daniel Courboin; Seong-Ho Jeong; In-Soo Lee; Cheol Shin; Hong-Seok Kim
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Paper Abstract

As the CD specification on Masks is getting more tighten, the fogging effect by re-scattered incident electron at a high acceleration e-beam system and the loading effect at dry etching step due to pattern density are current critical issues for mask making. These give rise to the variation of mean CD value and the degradation of global CD uniformity. So we have to correct these effects accurately in order to meet the CD specification for design rule 0.15um or below devices. In this paper, we have applied a new positive CA (chemically amplified) resist from Fuji Film Arch co., It was written at 50 kV variable vector scan E-beam system and we tried to classify the CD error by the fogging and loading effect, respectively. Also we have compared with ZEP7000 resist, non-CAR positive type, which is used widely for conventional e-beam mask making to assess the CAR performance, especially in terms of CD error causing by the fogging effect. Through this comparison test, we found that the CD error due to the fogging effect shows somewhat different value according to resist type and writing strategy even though use same exposure dose. In this paper, we have assumed that such results are due to the difference of dose latitude. Dose latitude is different as intrinsic contrast value of each resist and writing strategy such as writing pass, should affect on beam profile (dose profile), it can also change pattern profile of resist and it can finally cause a dose latitude difference. Finally, we have evaluated for CD mean error and uniformity error by fogging and etch loading as open ratio changing, respectively.

Paper Details

Date Published: 1 August 2002
PDF: 12 pages
Proc. SPIE 4754, Photomask and Next-Generation Lithography Mask Technology IX, (1 August 2002); doi: 10.1117/12.476943
Show Author Affiliations
Junsik S. Cho, DuPont Photomasks Korea Ltd. (South Korea)
Seung Hee Baek, DuPont Photomasks Korea Ltd. (South Korea)
Kyung-Han Nam, DuPont Photomasks Korea Ltd. (South Korea)
H. J. Cho, DuPont Photomasks Korea Ltd. (South Korea)
Daniel Courboin, DuPont Photomasks Korea Ltd. (South Korea)
Seong-Ho Jeong, DuPont Photomasks Korea Ltd. (South Korea)
In-Soo Lee, DuPont Photomasks Korea Ltd. (South Korea)
Cheol Shin, DuPont Photomasks Korea Ltd. (South Korea)
Hong-Seok Kim, DuPont Photomasks Korea Ltd. (South Korea)


Published in SPIE Proceedings Vol. 4754:
Photomask and Next-Generation Lithography Mask Technology IX
Hiroichi Kawahira, Editor(s)

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