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Proceedings Paper

Enriching design intent for optimal OPC and RET
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Paper Abstract

In typical rule- or model-based optical proximity correction (OPC) the goal is to align the silicon layout edges as closely as possible to the corresponding edges in the design layout. OPC precision requirements are approaching 1nm or less at the 0.1mm process node. While state-of-the-art OPC tools are capable of operating at this accuracy, such tight requirements increase computational cycle time, output file size, and photomask fabrication cost. Accuracy requirements on different features in the design may vary widely, and regions that do not need the highest accuracy can be exploited to reduce OPC complexity. For example, transistor gate dimensions require tighter dimensional control than interconnect features on the polysilicon layer. Furthermore gate features typically occupy less area than interconnect. When relaxed OPC accuracy requirements are applied to the interconnect features, but not the gate features, the overall complexity of the polysilicon mask pattern can be significantly reduced without losing accuracy where it counts.

Paper Details

Date Published: 1 August 2002
PDF: 6 pages
Proc. SPIE 4754, Photomask and Next-Generation Lithography Mask Technology IX, (1 August 2002); doi: 10.1117/12.476939
Show Author Affiliations
Michael L. Rieger, Avant! Corp. (United States)
Valery Gravoulet, Avant! Corp. (United States)
Jeffrey P. Mayhew, Avant! Corp. (United States)
Daniel F. Beale, Avant! Corp. (United States)
Robert M. Lugg, Avant! Corp. (United States)


Published in SPIE Proceedings Vol. 4754:
Photomask and Next-Generation Lithography Mask Technology IX
Hiroichi Kawahira, Editor(s)

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