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Proceedings Paper

Solution for 100 nm: EBM-4000
Author(s): Yoshiaki Hattori; Kiyoshi Hattori; Ken-ichi Murooka; Takayuki Abe; Satoshi Yasuda; Taiga Uno; Eiji Murakami; Noriaki Nakayamada; Naoharu Shimomura; Ttsuyoshi Yamashita; Noboru Yamada; Akihiro Sakai; Hirohiko Honda; Toshiaki Shimoyama; Kiyoshi Nakaso; Hideo Inoue; Yoshiaki Onimaru; Keiichi Makiyama; Yoji Ogawa; Tadahiro Takigawa
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Paper Abstract

Optical lithography will be extended down to 65nm to 50 nm. However, a mask with high accurate CD uniformity and resolution enhancement technology (RET) such as optical proximity effect correction (OPC) and phase shifting mask (PSM) are required to achieve resolution by exposure wave length. The mask technology is the key of the optical lithography extension. We developed the electron beam mask writer EBM-3000 for 180-150nm design rule 1), 2), and EBM-3500 for 150-130nm design rule 3), to achieve high accuracy CD uniformity mask and small OPC pattern writing. They were variable shaped electron beam mask writing system with continuous moving stage, at 50kV acceleration voltage, and had the functions of multi-pass field shift writing, real-time proximity effect correction, grid matching correction, and automatic adjustment for election optical column.The LSI road map calls for such small minimum feature size as that so close to optical resolution limitation where increasingly complex optical proximity corrections (OPC) as well as extremely good mask CD uniformity are required. What is making the challenge even more difficult is that writing time is exponentially increasing as the shot number is exploding to primarily cope with the complex and voluminous OPC and extremely good CD uniformity requirements. Thus the newly developed electron beam mask lithography system EBM-4000 is designed to overcome all these difficult problems associated with 100nm as well as 70nm node masks. In order to increase throughput, triangle/rectangle beam optical column, high current density/high resolution lens, and high speed DAC amplifiers have been developed. To achieve accurate CD uniformity, foggy electron correction/loading effect correction functions are developed.

Paper Details

Date Published: 1 August 2002
PDF: 8 pages
Proc. SPIE 4754, Photomask and Next-Generation Lithography Mask Technology IX, (1 August 2002); doi: 10.1117/12.476926
Show Author Affiliations
Yoshiaki Hattori, Toshiba Machine Co., Ltd. (Japan)
Kiyoshi Hattori, Toshiba Machine Co., Ltd. (Japan)
Ken-ichi Murooka, Toshiba Machine Co., Ltd. (Japan)
Takayuki Abe, Toshiba Machine Co., Ltd. (Japan)
Satoshi Yasuda, Toshiba Machine Co., Ltd. (Japan)
Taiga Uno, Toshiba Machine Co., Ltd. (Japan)
Eiji Murakami, Toshiba Machine Co., Ltd. (Japan)
Noriaki Nakayamada, Toshiba Machine Co., Ltd. (Japan)
Naoharu Shimomura, Toshiba Machine Co., Ltd. (Japan)
Ttsuyoshi Yamashita, Toshiba Machine Co., Ltd. (Japan)
Noboru Yamada, Toshiba Machine Co., Ltd. (Japan)
Akihiro Sakai, Toshiba Machine Co., Ltd. (Japan)
Hirohiko Honda, Toshiba Machine Co., Ltd. (Japan)
Toshiaki Shimoyama, Toshiba Machine Co., Ltd. (Japan)
Kiyoshi Nakaso, Toshiba Machine Co., Ltd. (Japan)
Hideo Inoue, Toshiba Machine Co., Ltd. (Japan)
Yoshiaki Onimaru, Toshiba Machine Co., Ltd. (Japan)
Keiichi Makiyama, Toshiba Machine Co., Ltd. (Japan)
Yoji Ogawa, Toshiba Machine Co., Ltd. (Japan)
Tadahiro Takigawa, Toshiba Machine Co., Ltd. (Japan)


Published in SPIE Proceedings Vol. 4754:
Photomask and Next-Generation Lithography Mask Technology IX
Hiroichi Kawahira, Editor(s)

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