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Proceedings Paper

100-kV high-resolution e-beam lithography system: JBX-9300FS
Author(s): Hitoshi Takemura; Hirofumi Ohki; Moriyuki Isobe
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Paper Abstract

Electron beam lithography system JBX-9300FS has the specifications of high-resolution exposure down to 20nm line width and also of accuracy of 20nm field stitching and 25nm overlay for alignment exposure on wafer. In this paper we will introduce 100kV high voltage gun design, new functions of hardware and software and recent results of evaluation data of the system. It is expected that the high precision lithography with high accelerating fine beam by JBX-9300FS will greatly contribute to the use of not only direct writing for the development of next generation devices and the production of optical or communication devices but also the development and prototype production of new masks for Next Generation Lithography tools, such as x-ray, EUV, EPL, and LEEPL.

Paper Details

Date Published: 1 August 2002
PDF: 7 pages
Proc. SPIE 4754, Photomask and Next-Generation Lithography Mask Technology IX, (1 August 2002); doi: 10.1117/12.476925
Show Author Affiliations
Hitoshi Takemura, JEOL Ltd. (Japan)
Hirofumi Ohki, JEOL Ltd. (Japan)
Moriyuki Isobe, JEOL Ltd. (Japan)


Published in SPIE Proceedings Vol. 4754:
Photomask and Next-Generation Lithography Mask Technology IX
Hiroichi Kawahira, Editor(s)

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