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Proceedings Paper

Low-temperature plasma-deposited microcrystalline silicon thin films: an emerging material for stable thin film transistors
Author(s): Pere Roca i Cabarrocas; Samir Kasouit; B. Kalache; Regis Vanderhaghen; Y. Bonnassieux; M. Elyaakoubi; I. D. French
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Paper Abstract

Top gate and bottom gate microcrystalline silicon thin film transistors (TFTs) have been produced by the radio frequency glow discharge technique using three preparation methods: the standard hydrogen dilution of silane in hydrogen, the use of the layer-by-layer technique, and the use of SiF4-Ar-H2 feedstock. In all cases, stable top gate TFT with mobility values around 1 cm2/V.s have been achieved, making them suitable for circuit on glass applications. Moreover, the use of SiF4 gas combined with specific treatments of the a-SiN:H dielectric in bottom gate TFTs, fully compatible with today's a-Si:H process, lead to lateral growth of the silicon crystallites and an enhancement of the mobility to reach stable values of around 3 cm2/V.s.

Paper Details

Date Published: 16 May 2003
PDF: 11 pages
Proc. SPIE 5004, Poly-Silicon Thin Film Transistor Technology and Applications in Displays and Other Novel Technology Areas, (16 May 2003); doi: 10.1117/12.476827
Show Author Affiliations
Pere Roca i Cabarrocas, CNRS-Lab. de Physique des Interfaces et des Couches Minces (France)
Samir Kasouit, CNRS-Lab. de Physique des Interfaces et des Couches Minces (France)
UNAXIS France SA (France)
B. Kalache, CNRS-Lab. de Physique des Interfaces et des Couches Minces (France)
Regis Vanderhaghen, CNRS-Lab. de Physique des Interfaces et des Couches Minces (France)
Y. Bonnassieux, CNRS-Lab. de Physique des Interfaces et des Couches Minces (France)
M. Elyaakoubi, UNAXIS France SA (France)
I. D. French, Philips Research Labs. (United Kingdom)


Published in SPIE Proceedings Vol. 5004:
Poly-Silicon Thin Film Transistor Technology and Applications in Displays and Other Novel Technology Areas
Apostolos T. Voutsas, Editor(s)

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