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Proceedings Paper

Investigation of uniform deposition of GaInAsP quantum wells by MOCVD
Author(s): Norbert Puetz; Carla J. Miner; G. Hingston; Chris J. Moore; Brad Watt; Glen Hillier
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Paper Abstract

The growth pattern of GaInAsfInP quantum wells on large area InP substrates has been investigated. Scanning Photoluminescence (sPL) performed at room temperature has been utilized to map the entire area of the wafers at a spatial resolution of 600x600j. tm. It will be shown that the local variation in energy shift of the quantum well luminescence is caused by variations in growth rate which matches the growth rate distribution in GaInAs bulk layers. The sPL data were compared to model calculations of the growth rate as a function of position on the wafer. Through the acquired insight in the growth process new process parameters could be chosen where not only the uniformity of quantum well thickness but also that of GaInAs bulk layers was substantially improved.

Paper Details

Date Published: 1 March 1991
PDF: 7 pages
Proc. SPIE 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization, (1 March 1991); doi: 10.1117/12.47675
Show Author Affiliations
Norbert Puetz, Bell Northern Research (Canada)
Carla J. Miner, Bell Northern Research (Canada)
G. Hingston, Waterloo Scientific Inc. (Canada)
Chris J. Moore, Waterloo Scientific Inc. (Canada)
Brad Watt, Bell Northern Research (Canada)
Glen Hillier, Bell Northern Research (Canada)


Published in SPIE Proceedings Vol. 1361:
Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization

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