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Proceedings Paper

Real-time x-ray studies of semiconductor device structures
Author(s): Roy Clarke; Waldemar Dos Passos; Yi-Jen Chan; Dimitris Pavlidis; Walter P. Lowe; Brian G. Rodricks; Christine M. Brizard
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Paper Abstract

We discuss the application of high-resolution x-ray diffractometry to studies of semiconductor heterostructures. A new technique has been devised which extends structural measurements into the time domain. Using x-ray synchrotron radiation in conjunction with dispersive optics and fast x-ray area detectors we have been able to study for the first time the structure of heterointerfaces undergoing thermal processing. The techniques are illustrated with results on the strain kinetics of SQW''s and ion-implanted InAli_As layers.

Paper Details

Date Published: 1 March 1991
PDF: 11 pages
Proc. SPIE 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization, (1 March 1991); doi: 10.1117/12.47673
Show Author Affiliations
Roy Clarke, Univ. of Michigan (United States)
Waldemar Dos Passos, Univ. of Michigan (United States)
Yi-Jen Chan, Univ. of Michigan (United States)
Dimitris Pavlidis, Univ. of Michigan (United States)
Walter P. Lowe, AT&T Bell Labs. (United States)
Brian G. Rodricks, Argonne National Lab. (United States)
Christine M. Brizard, Argonne National Lab. (United States)


Published in SPIE Proceedings Vol. 1361:
Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization
Manijeh Razeghi, Editor(s)

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