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Proceedings Paper

Real-time x-ray studies of semiconductor device structures
Author(s): Roy Clarke; Waldemar Dos Passos; Yi-Jen Chan; Dimitris Pavlidis; Walter P. Lowe; Brian G. Rodricks; Christine M. Brizard
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Paper Details

Date Published: 1 March 1991
PDF: 11 pages
Proc. SPIE 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization, (1 March 1991); doi: 10.1117/12.47673
Show Author Affiliations
Roy Clarke, Univ. of Michigan (United States)
Waldemar Dos Passos, Univ. of Michigan (United States)
Yi-Jen Chan, Univ. of Michigan (United States)
Dimitris Pavlidis, Univ. of Michigan (United States)
Walter P. Lowe, AT&T Bell Labs. (United States)
Brian G. Rodricks, Argonne National Lab. (United States)
Christine M. Brizard, Argonne National Lab. (United States)


Published in SPIE Proceedings Vol. 1361:
Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization

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