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Proceedings Paper

Development of small silicon modulators in silicon-on-insulator (SOI)
Author(s): Ching Eng Png; Graham T. Reed; Ragheid M.H. Atta; Graham J. Ensell; Alan G. R. Evans
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Paper Abstract

Silicon-based optical modulators are expected to be important components in some optical networks. The optical modulation mechanism can be achieved either via the plasma dispersion effect, or by thermal means. Both are relatively slow processes when utilized in large (multi micron) waveguide structures, which researchers tend to concentrate on for ease of coupling. Using large waveguide structures limits the operating speed and hence excludes the applicability of these devices in areas where higher speeds are required. This limitation could be overcomed by using smaller waveguides (of the order of 1Rm). In this paper, we present the basic operating mechanism, design, and fabrication details of an optimum three terminal p-i-n diode based optical phase modulator based on Silicon-On-Insulator (501). The device was optimised via electrical and optical modeling and is predicted to operated at 1 .3GHz with a power reduction of900%, as compared to previously published designs.

Paper Details

Date Published: 30 May 2003
PDF: 8 pages
Proc. SPIE 4997, Photonics Packaging and Integration III, (30 May 2003); doi: 10.1117/12.476666
Show Author Affiliations
Ching Eng Png, Univ. of Surrey (United Kingdom)
Graham T. Reed, Univ. of Surrey (United Kingdom)
Ragheid M.H. Atta, Univ. of Southampton (United Kingdom)
Graham J. Ensell, Univ. of Southampton (United Kingdom)
Alan G. R. Evans, Univ. of Southampton (United Kingdom)


Published in SPIE Proceedings Vol. 4997:
Photonics Packaging and Integration III
Randy A. Heyler; David J. Robbins; Ghassan E. Jabbour, Editor(s)

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