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Proceedings Paper

Light extraction technologies for high efficiency GaInN-LED devices
Author(s): Volker Haerle; Berthold Hahn; Stephan Kaiser; Andreas Weimar; Dominik Eisert; Stefan Bader; Andreas Ploessl; Franz Eberhard
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Paper Abstract

Data are presented for an GaInN based thinfilm LED. The LED is fabricated by transferring the epilayers with laser lift off from sapphire to a GaAs host substrate. In combination with efficient surface roughening and highly reflective p-mirror metallisation an extraction efficiency of 70% and wall plug efficiency of 24% at 460nm have been shown. The chips showed 12mW @ 20mA with a Voltage of 3.2V. The technology is scalable from small size LEDs to high current Chips and is being transferred to mass production.

Paper Details

Date Published: 3 July 2003
PDF: 6 pages
Proc. SPIE 4996, Light-Emitting Diodes: Research, Manufacturing, and Applications VII, (3 July 2003); doi: 10.1117/12.476591
Show Author Affiliations
Volker Haerle, OSRAM Opto Semiconductors GmbH & Co. (Germany)
Berthold Hahn, OSRAM Opto Semiconductors GmbH & Co. (Germany)
Stephan Kaiser, OSRAM Opto Semiconductors GmbH & Co. (Germany)
Andreas Weimar, OSRAM Opto Semiconductors GmbH & Co. (Germany)
Dominik Eisert, OSRAM Opto Semiconductors GmbH & Co. (Germany)
Stefan Bader, OSRAM Opto Semiconductors GmbH & Co. (Germany)
Andreas Ploessl, OSRAM Opto Semiconductors GmbH & Co. (Germany)
Franz Eberhard, OSRAM Opto Semiconductors GmbH & Co. (Germany)


Published in SPIE Proceedings Vol. 4996:
Light-Emitting Diodes: Research, Manufacturing, and Applications VII
E. Fred Schubert; H. Walter Yao; Kurt J. Linden; Daniel J. McGraw, Editor(s)

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