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Proceedings Paper

Wafer-bonded thin-film surface-roughened light-emitting diodes
Author(s): Cathleen Rooman; Stijn De Jonge; Christian Karnutsch; Klaus Streubel; Maarten Kuijk; Barundeb Dutta; Gustaaf Borghs; Paul L. Heremans
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Paper Abstract

We propose a new process for thin-film surface-textured LEDs that provides uniform current injection for both top and bottom contacts. The structure uses a partially conductive mirror. This eliminates the need for thick epitaxial layers and makes it possible to fabricate very large LEDs. Furthermore, the new process allows to obtain both high external quantum efficiency and high wallplug efficiency. 400 x 400 μm GaInP/AlGaInP LEDs reach maximum external quantum efficiencies of 35% at 12 mA without encapsulation. The wallplug efficiency reaches 34% at 2.6 mA. At an operating current of 60 mA, the devices emit 30 mW of light.

Paper Details

Date Published: 3 July 2003
PDF: 6 pages
Proc. SPIE 4996, Light-Emitting Diodes: Research, Manufacturing, and Applications VII, (3 July 2003); doi: 10.1117/12.476566
Show Author Affiliations
Cathleen Rooman, IMEC (Belgium)
Univ. of Brussels (Belgium)
Stijn De Jonge, IMEC (Belgium)
Christian Karnutsch, OSRAM Opto Semiconductors GmbH & Co. (Germany)
Klaus Streubel, OSRAM Opto Semiconductors GmbH & Co. (Germany)
Maarten Kuijk, Univ. of Brussels (Belgium)
Barundeb Dutta, IMEC (Belgium)
Gustaaf Borghs, IMEC (Belgium)
Paul L. Heremans, IMEC (Belgium)

Published in SPIE Proceedings Vol. 4996:
Light-Emitting Diodes: Research, Manufacturing, and Applications VII
E. Fred Schubert; H. Walter Yao; Kurt J. Linden; Daniel J. McGraw, Editor(s)

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