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Proceedings Paper

Vertical hexagonal GaN nanorods grown on (111)Si substrate
Author(s): Ching-Lien Hsiao; Li-Wei Tu; T. W. Chi; Jamafon Jian-Feng Wu; Kuang-Yu Hsieh; Ikai Lo
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Paper Abstract

Vertical hexagonal GaN nanorods are grown on (111)Si substrates by plasma-assisted molecular beam epitaxy. No extra catalyst is used to assist the GaN nanorods growth. Nanorods top surfaces are hexagons with diameter ≤10-200 nm by field emission scanning electron microscopy. The image of high-resolution transmission electron microscopy (HR-TEM) shows that the nanorods are single crystal without dislocations. Diffraction pattern of TEM also shows that the nanorods are wurtzite GaN with direction [0001] along the length direction. The temperature dependent photoluminescence (PL) spectroscopy shows only one peak at 3.405 eV at room temperature but two peaks at 3.467 eV and 3.433 eV at 66 K. After ammonia sulfur [(NH4)2S] treatment, the low energy peak disappears. The PL spectra are also compared to the ones of epitaxial GaN thin film on (111)Si and it concludes that the low energy peak is from the nanorods contribution. The micro-Raman spectroscopy shows Stokes scattering lines at 532.7 cm-1, 558.3 cm-1, 567.1 cm-1, and 736.1 cm-1 with 532 nm laser focused on the rod lateral surface and at 558.7 cm-1, 567.8 cm-1, and 736.4 cm-1 focused on the film from the top. The width and the length of the nanorods vary with the growth time and the nanorods growth rate keeps ~20 % higher than the film. The growth mechanisms will be discussed.

Paper Details

Date Published: 3 July 2003
PDF: 9 pages
Proc. SPIE 4996, Light-Emitting Diodes: Research, Manufacturing, and Applications VII, (3 July 2003); doi: 10.1117/12.476564
Show Author Affiliations
Ching-Lien Hsiao, National Sun Yat-Sen Univ. (Taiwan)
Li-Wei Tu, National Sun Yat-Sen Univ. (Taiwan)
T. W. Chi, National Sun Yat-Sen Univ. (Taiwan)
Jamafon Jian-Feng Wu, National Sun Yat-Sen Univ. (Taiwan)
Kuang-Yu Hsieh, National Sun Yat-Sen Univ. (Taiwan)
Ikai Lo, National Sun Yat-Sen Univ. (Taiwan)

Published in SPIE Proceedings Vol. 4996:
Light-Emitting Diodes: Research, Manufacturing, and Applications VII
E. Fred Schubert; H. Walter Yao; Kurt J. Linden; Daniel J. McGraw, Editor(s)

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