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Proceedings Paper

Light-emitting diodes on Si
Author(s): Eih-Zhe Liang; Ching-Fuh Lin; Ting-Wien Su; Wu-Ping Huang; Hsing-Hung Hsieh
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Paper Abstract

To extend the usage of silicon as light emitter in optoelectronics, two ways are exploited to overcome its indirect bangap obstacle. Metal-oxide-semiconductor structures with silicon dioxide (SiO2) nanoparticles as oxide layer exhibits electroluminescence with 1.5 x 10-4 external efficiency at Si bandgap energy. The enhancement in light emission is attributed to carrier concentration due to non-uniformity of oxide thickness. Another approach is to take advantage of direct bandgap materials. Chemically synthesized cadmium sulfide (CdS) nanoparticles are deposited on Si substrate and exhibits electroluminescence corresponding to different process treatment.

Paper Details

Date Published: 3 July 2003
PDF: 11 pages
Proc. SPIE 4996, Light-Emitting Diodes: Research, Manufacturing, and Applications VII, (3 July 2003); doi: 10.1117/12.476559
Show Author Affiliations
Eih-Zhe Liang, National Taiwan Univ. (Taiwan)
Ching-Fuh Lin, National Taiwan Univ. (Taiwan)
Ting-Wien Su, National Taiwan Univ. (Taiwan)
Wu-Ping Huang, National Taiwan Univ. (Taiwan)
Hsing-Hung Hsieh, National Taiwan Univ. (Taiwan)


Published in SPIE Proceedings Vol. 4996:
Light-Emitting Diodes: Research, Manufacturing, and Applications VII
E. Fred Schubert; H. Walter Yao; Kurt J. Linden; Daniel J. McGraw, Editor(s)

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