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Proceedings Paper

Degradation and transient currents in III-nitride LEDs
Author(s): Yury T. Rebane; Natalia I. Bochkareva; Vladislav E. Bougrov; Dmitry V. Tarkhin; Yury G. Shreter; Eugeny A. Girnnov; Sergey I. Stepanov; Wang N. Wang; P. T. Chang; Pei Jih Wang
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Paper Abstract

Effect of degradation processes on transient currents in LEDs has been studied. It has been found that transient currents are several orders of magnitude higher than steady-state currents. The transient current time dependencies are non-exponential and show a distribution of relaxation times in the range of 1-100 microseconds. The charge associated with the transient currents is Q ~3x10-10 C which corresponds to high number of carrier traps Nt ~ 2x109 in the investigated chips. For one-year old chips an increase of charge and trap number by ~ 25% has been found compared to the fresh chips. Two probable reasons have been suggested to explain the observed increase of number of carrier traps: first one is related to increase of the number of trap sites at dislocations, and second one is a gradual phase separation process in quantum wells resulting in degradation of their quality.

Paper Details

Date Published: 3 July 2003
PDF: 12 pages
Proc. SPIE 4996, Light-Emitting Diodes: Research, Manufacturing, and Applications VII, (3 July 2003); doi: 10.1117/12.476553
Show Author Affiliations
Yury T. Rebane, A.F. Ioffe Physico-Technical Institute (Russia)
Natalia I. Bochkareva, A.F. Ioffe Physico-Technical Institute (Russia)
Vladislav E. Bougrov, A.F. Ioffe Physico-Technical Institute (Russia)
Dmitry V. Tarkhin, A.F. Ioffe Physico-Technical Institute (Russia)
Yury G. Shreter, A.F. Ioffe Physico-Technical Institute (Russia)
Eugeny A. Girnnov, Univ. of Bath (United Kingdom)
Sergey I. Stepanov, Univ. of Bath (United Kingdom)
Wang N. Wang, Univ. of Bath (United Kingdom)
P. T. Chang, ARIMA Optoelectronic Corp. (Taiwan)
Pei Jih Wang, ARIMA Optoelectronic Corp. (Taiwan)

Published in SPIE Proceedings Vol. 4996:
Light-Emitting Diodes: Research, Manufacturing, and Applications VII
E. Fred Schubert; Kurt J. Linden; H. Walter Yao; Daniel J. McGraw, Editor(s)

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