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Proceedings Paper

Investigation of ultra-low-load nanoindentation for the patterning of nanostructures
Author(s): Curtis Taylor; Robin Prince; Ajay P. Malshe; Laura Riester; Gregory J. Salamo; Seong Oh Cho
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Paper Abstract

In this study, nanoindents are characterized for the patterning of nanostructures. Nanoindentation is performed on Sidoped (n-type)Vertical Gradient Freeze (VGF) GaAs (100) and epitaxial GaAs (100) using a diamond Cube Corner indenter. Nanoindentation of GaAs has been studied in the past, but not at extremely low loads. Previous research has been done on high load (50-200 mN) and low load (0.2-8 mN) nanoindentation. The size of nanostructures range from 10-100 nm, requiring a nanoindentation width in the same size range. The loads required to produce such small indentations are in a lower regime of <0.2 mN, which to the authors’ knowledge is an area that has not been previously studied using a Cube Corner indenter. Ultra-low-load (<0.2 mN) nanoindentations are characterized in order to study the selective growth of nanostructures on the indentation sites. Indentations of less than 200 nm in width are produced, and mechanical properties of the two materials including hardness and elastic modulus are calculated and compared. The geometry of the indents is characterized using atomic force microscopy (AFM).

Paper Details

Date Published: 13 November 2002
PDF: 11 pages
Proc. SPIE 4936, Nano- and Microtechnology: Materials, Processes, Packaging, and Systems, (13 November 2002); doi: 10.1117/12.476103
Show Author Affiliations
Curtis Taylor, Univ. of Arkansas (United States)
Robin Prince, Univ. of Arkansas (United States)
Ajay P. Malshe, Univ. of Arkansas (United States)
Laura Riester, Oak Ridge National Laboratory (United States)
Gregory J. Salamo, Univ. of Arkansas (United States)
Seong Oh Cho, Univ. of Arkansas (United States)

Published in SPIE Proceedings Vol. 4936:
Nano- and Microtechnology: Materials, Processes, Packaging, and Systems
Dinesh K. Sood; Ajay P. Malshe; Ryutaro Maeda, Editor(s)

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