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Proceedings Paper

Injected semiconductor laser
Author(s): S. Blin; Guy Michel Stephan; Laurent Renaud Gabet; Patrice Feron; Francoise Lissillour; Pascal Besnard
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Paper Abstract

The response of a single mode semiconductor laser to an injected external signal has been studied. The control parameters are the power and the frequency of the injected signal together with the gain of the laser. The injected power varies from 6 down to -120 dBm. Following the magnitude of these control parameters many phenomena can be observed. When both injected field and laser eigenfield are of the same order of magnitude they compete in a non-linear way, leading to frequency generation, push-pull effects, hysteresis phenomena and chaos. For weak dBm the laser behaves with the injected field in the same way as it does for the spontaneous emission which is its natural source. We describe the role of the injected laser as a filter and an amplifier in this case. It follows that the laser can be used to process information in ways that are not yet completely exploited.

Paper Details

Date Published: 24 July 2002
PDF: 12 pages
Proc. SPIE 4751, ICONO 2001: Nonlinear Optical Phenomena and Nonlinear Dynamics of Optical Systems, (24 July 2002); doi: 10.1117/12.475957
Show Author Affiliations
S. Blin, Ecole Nationale des Sciences Appliquees et de Technologies (France)
Guy Michel Stephan, Ecole Nationale des Sciences Appliquees et de Technologies (France)
Laurent Renaud Gabet, Ecole Nationale des Sciences Appliquees et de Technologies (France)
Patrice Feron, Ecole Nationale des Sciences Appliquees et de Technologies (France)
Francoise Lissillour, Ecole Nationale des Sciences Appliquees et de Technologies (France)
Pascal Besnard, Ecole Nationale des Sciences Appliquees et de Technologies (France)


Published in SPIE Proceedings Vol. 4751:
ICONO 2001: Nonlinear Optical Phenomena and Nonlinear Dynamics of Optical Systems

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