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Proceedings Paper

Self-channelling of light beams in semiconductor compounds
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Paper Abstract

The self-channeling of cylindrical light beams versus the excitation density, light frequency, and crystallographic orientation is numerically analyzed in GaAs, ZnSe, CdS semiconductors. A comparison of the data obtained and reported for diode and streamer semiconductor lasers is made. Made out of reversing of the angular anisotropy of the real third order nonlinear optical susceptibility is worthy to be studied for a practical implementation.

Paper Details

Date Published: 24 July 2002
PDF: 6 pages
Proc. SPIE 4751, ICONO 2001: Nonlinear Optical Phenomena and Nonlinear Dynamics of Optical Systems, (24 July 2002); doi: 10.1117/12.475908
Show Author Affiliations
Uladzimir V. Zubrytski, B.I. Stepanov Institute of Physics (Belarus)


Published in SPIE Proceedings Vol. 4751:
ICONO 2001: Nonlinear Optical Phenomena and Nonlinear Dynamics of Optical Systems

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