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Proceedings Paper

Advances in InAlGaN laser diode technology toward the development of UV optical sources
Author(s): Michael Kneissl; David W. Treat; Mark Teepe; Naoko Miyashita; Noble M. Johnson
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Paper Abstract

We report on ultraviolet (UV) InGaN and GaN multiple quantum well (MQW) laser diodes grown on c-plane sapphire substrates by metal organic chemical vapor deposition. By reducing the indium content in the InGaN/InAlGaN MQW, we have systematically pushed the room-temperature laser emission to a record low wavelength of 363.2nm. Pulsed threshold current densities around 5 kA/cm2 have been achieved for laser diodes with emission wavelength between 368 nm and 378 nm. Light output powers greater than 400mW under pulsed current-injection conditions (pulse duration 500 ns, repetition frequency 1 kHz) and differential quantum efficiencies of 4.8% have been achieved. We also demonstrate room-temperature continuous-wave operation of ridge-waveguide devices with threshold currents of 85 mA for an emission wavelength of 377.8 nm and output power of more than 3 mW.

Paper Details

Date Published: 3 July 2003
PDF: 5 pages
Proc. SPIE 4995, Novel In-Plane Semiconductor Lasers II, (3 July 2003); doi: 10.1117/12.475786
Show Author Affiliations
Michael Kneissl, Palo Alto Research Ctr. Inc. (United States)
David W. Treat, Palo Alto Research Ctr. Inc. (United States)
Mark Teepe, Palo Alto Research Ctr. Inc. (United States)
Naoko Miyashita, Palo Alto Research Ctr. Inc. (United States)
Noble M. Johnson, Palo Alto Research Ctr. Inc. (United States)


Published in SPIE Proceedings Vol. 4995:
Novel In-Plane Semiconductor Lasers II
Claire F. Gmachl; David P. Bour, Editor(s)

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