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Proceedings Paper

GaN-based laser diodes emitting from ultraviolet to blue-green
Author(s): Shinichi Nagahama; Masahiko Sano; Tomoya Yanamoto; Daisuke Morita; Osamu Miki; Keiji Sakamoto; Masashi Yamamoto; Yuuji Matsuyama; Yasuhiro Kawata; Takashi Murayama; Takashi Mukai
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Paper Abstract

GaN-based laser diodes (LDs), which emit from UV to blue-green, are reviewed. For fabricating the UV LDs, we used the AlInGaN active layer instead of InGaN one. We demonstrated the UV LDs with a lasing wavelength 368nm under continuous-wave (cw) operation. Moreover, we fabricated the blue-green LDs whose lasing wavelength was 480 nm. It was investigated that the relationship between the threshold current density and the lasing wavelength. From our experiments, we successfully expanded the range of GaN-based LDs lasing wavelength, from UV (368 nm) to blue-green (480 nm). Regarding high power 405 nm-LDs, we could demonstrate the cw operated LD array devices with an output power of 1W by decreasing the thermal resistance of the LD chips.

Paper Details

Date Published: 3 July 2003
PDF: 9 pages
Proc. SPIE 4995, Novel In-Plane Semiconductor Lasers II, (3 July 2003); doi: 10.1117/12.475759
Show Author Affiliations
Shinichi Nagahama, Nichia Corp. (Japan)
Masahiko Sano, Nichia Corp. (Japan)
Tomoya Yanamoto, Nichia Corp. (Japan)
Daisuke Morita, Nichia Corp. (Japan)
Osamu Miki, Nichia Corp. (Japan)
Keiji Sakamoto, Nichia Corp. (Japan)
Masashi Yamamoto, Nichia Corp. (Japan)
Yuuji Matsuyama, Nichia Corp. (Japan)
Yasuhiro Kawata, Nichia Corp. (Japan)
Takashi Murayama, Nichia Corp. (Japan)
Takashi Mukai, Nichia Corp. (Japan)

Published in SPIE Proceedings Vol. 4995:
Novel In-Plane Semiconductor Lasers II
Claire F. Gmachl; David P. Bour, Editor(s)

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