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Proceedings Paper

High-power single-mode 915-nm InAlGaAs quantum-well lasers grown by MOCVD
Author(s): Zuntu Xu; Wei Gao; Alan Nelson; Kejian Luo; Haiquan Yang; Lisen Cheng; Brad Siskavich; Zhiping Wang; Aland K. Chin
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Paper Abstract

We report results on single-mode, InAlGaAs/AlGaAs/GaAs, 915 nm, lser-diodes operating reliably at 300 mW. The graded-index, separate-confinement, strained, single quantum-well structure was grown by metal-organic chemical-vapor deposition. Carbon, rather than zinc, was used as the p-doping srouce to reduce internal loss and potential reliability issues due to the thermal diffusion of zinc. A threshold current density of 133 A/cm2, internal loss of 2.0 cm-1 and internal quatnum efficiency of 93% were achieved. FOr 1500 μm long ridge waveguide lasers, a record single-mode output-power of 500mW was obtained for devices mounted epitaxial-side up onto AlN submounts using eutectic Au80Sn20 solder. Ten burned-in devices have now been aged at a constant current of 450 mA at 85°C for more than 1500 hours wihtout measurable degradation.

Paper Details

Date Published: 3 July 2003
PDF: 7 pages
Proc. SPIE 4995, Novel In-Plane Semiconductor Lasers II, (3 July 2003); doi: 10.1117/12.475751
Show Author Affiliations
Zuntu Xu, Axcel Photonics, Inc. (United States)
Wei Gao, Axcel Photonics, Inc. (United States)
Alan Nelson, Axcel Photonics, Inc. (United States)
Kejian Luo, Axcel Photonics, Inc. (United States)
Haiquan Yang, Axcel Photonics, Inc. (United States)
Lisen Cheng, Axcel Photonics, Inc. (United States)
Brad Siskavich, Axcel Photonics, Inc. (United States)
Zhiping Wang, Axcel Photonics, Inc. (United States)
Aland K. Chin, Axcel Photonics, Inc. (United States)


Published in SPIE Proceedings Vol. 4995:
Novel In-Plane Semiconductor Lasers II
Claire F. Gmachl; David P. Bour, Editor(s)

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