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Proceedings Paper

Comparison of approaches to 850-nm 2D VCSEL arrays
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Paper Abstract

There is a wide variety of reasons why future high-performance datacom links are believed to rely on two-dimensional VCSEL arrays suitable for direct flip-chip hybridization. Some typical are as follows: highest interconnect density, high-frequency operation, self alignment for precise mounting, productivity at high number of channels per chip. In this paper the latest approaches to flip-chip VCSELs are presented. In particular we will asses the properties of transparent substrate VCSEL arrays which are soldered light-emitting side up as well as VCSEL arrays which are soldered light-emitting side down, e.g., onto a CMOS driver chip. The VCSEL arrays are designed for bottom- or top-emission at 850 nm emission wavelength and modulation speeds up to 10 Gbps per channel.

Paper Details

Date Published: 17 June 2003
PDF: 9 pages
Proc. SPIE 4994, Vertical-Cavity Surface-Emitting Lasers VII, (17 June 2003); doi: 10.1117/12.475739
Show Author Affiliations
Martin Grabherr, U-L-M Photonics GmbH (Germany)
Steffan Intemann, U-L-M Photonics GmbH (Germany)
Roland Jager, U-L-M Photonics GmbH (Germany)
Roger King, U-L-M Photonics GmbH (Germany)
Rainer Michalzik, Univ. Ulm (Germany)
Hendrik Roscher, Univ. Ulm (Germany)
Dieter Wiedenmann, U-L-M Photonics GmbH (Germany)


Published in SPIE Proceedings Vol. 4994:
Vertical-Cavity Surface-Emitting Lasers VII
Chun Lei; Sean P. Kilcoyne, Editor(s)

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