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Proceedings Paper

Neutron transmutation doped far-infrared p-Ge laser
Author(s): Eric W. Nelson; Elena S. Flitsiyan; Andrei V. Muravjov; Maxim V. Dolguikh; Robert E. Peale; Steven H. Kleckley; William G. Vernetson; V. Z. Tsipin
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Paper Abstract

Far-infrared p-Ge laser operation in an active crystal prepared by transmutation doping is demonstrated for the first time. Though saturated current density in the prepared active crystal is twice lower than optimal, the laser performance is comparable to that of good lasers made from commercially produced melt grown p-Ge. The current saturation behavior of this material confirms the expected higher doping uniformity over melt grown laser rods.

Paper Details

Date Published: 19 June 2003
PDF: 10 pages
Proc. SPIE 4993, High-Power Fiber and Semiconductor Lasers, (19 June 2003); doi: 10.1117/12.475736
Show Author Affiliations
Eric W. Nelson, Univ. of Central Florida (United States)
Elena S. Flitsiyan, Univ. of Central Florida (United States)
Andrei V. Muravjov, Univ. of Central Florida (United States)
Maxim V. Dolguikh, Univ. of Central Florida (United States)
Robert E. Peale, Univ. of Central Florida (United States)
Steven H. Kleckley, Zaubertek, Inc. (United States)
William G. Vernetson, Univ. of Florida (United States)
V. Z. Tsipin, Uzbekistan Academy of Science (Uzbekistan)

Published in SPIE Proceedings Vol. 4993:
High-Power Fiber and Semiconductor Lasers
Mahmoud Fallahi; Jerome V. Moloney, Editor(s)

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