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Proceedings Paper

Ultrafast carrier dynamics in InGaN MQW laser diode
Author(s): Kian-Giap Gan; Chi-Kuang Sun; John Edward Bowers; Steven P. DenBaars
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Paper Abstract

The ultrafast carrier dynamics in InGaN multiple quantum well (MQW) laser diodes were investigated using a time-resolved bias-lead monitoring techniques. Both pump and probe beams were from the second harmonic generation (SHG) of a tunable 100-fs Ti:Sapphire modelocked laser. From the optical selection rules of TE and TM polarized lights, one can selectively excite and probe different valance subbands to conduction band transitions in the MQW structure with different polarized pump and probe light. Using this technique, ultrafast inter-subband hole relaxation processes were found to dominate the observed carrier dynamics.

Paper Details

Date Published: 30 May 2003
PDF: 7 pages
Proc. SPIE 4992, Ultrafast Phenomena in Semiconductors VII, (30 May 2003); doi: 10.1117/12.475718
Show Author Affiliations
Kian-Giap Gan, Univ. of California/Santa Barbara (United States)
Chi-Kuang Sun, National Taiwan Univ. (Taiwan)
John Edward Bowers, Univ. of California/Santa Barbara (United States)
Steven P. DenBaars, Univ. of California/Santa Barbara (United States)

Published in SPIE Proceedings Vol. 4992:
Ultrafast Phenomena in Semiconductors VII
Kong-Thon F. Tsen; Jin-Joo Song; Hongxing Jiang, Editor(s)

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