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Proceedings Paper

Ultrafast coherent and incoherent dynamics of intersubband excitations in semiconductor quantum wells
Author(s): Thomas Elsaesser; Robert A. Kaindl; Felix Eickemeyer; Klaus Reimann; Michael Woerner; R. Hey; Christian Miesner; Karl Brunner; Gerhard Abstreiter
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Paper Abstract

The generation, manipulation and relaxation of optical intersubband excitations in n-type GaAs/AlGaAs and p-type SiGe/Si quantum wells are studied by different techniques of ultrafast spectroscopy in the mid-infrared. For electrons in GaAs/AlGaAs quantum wells, femtosecond time-resolved four-wave-mixing studies demonstrate de-phasing times of coherent intersubband polarizations of several hundreds of femtoseconds which are determined by electron-electron scattering. The measured dephasing times fully account for the width of the stationary intersubband absorption line, giving evidence of a predominant homogeneous broadening. Using phase-locked mid-infrared pulses and phase-resolving detection schemes, coherent optical control of such intersubband polarizations is demonstrated. In a second experiment, we study the intersubband relaxation of heavy holes (HH) in p-type SiGe/Si quantum wells. Intersubband scattering from the HH2 back to the HH1 subband occurs with a time constant of 250 fs determined by scattering with optical phonons through the deformation potential interaction.

Paper Details

Date Published: 30 May 2003
PDF: 11 pages
Proc. SPIE 4992, Ultrafast Phenomena in Semiconductors VII, (30 May 2003); doi: 10.1117/12.475713
Show Author Affiliations
Thomas Elsaesser, Max-Born-Institute (Germany)
Robert A. Kaindl, Max-Born-Institute (Germany)
Felix Eickemeyer, Max-Born-Institute (Germany)
Klaus Reimann, Max-Born-Institute (Germany)
Michael Woerner, Max-Born-Institute (Germany)
R. Hey, Paul-Drude-Institute (Germany)
Christian Miesner, Technische Univ. Muenchen (Germany)
Karl Brunner, Technische Univ. Muenchen (Germany)
Gerhard Abstreiter, Technische Univ. Muenchen (Germany)

Published in SPIE Proceedings Vol. 4992:
Ultrafast Phenomena in Semiconductors VII
Kong-Thon F. Tsen; Jin-Joo Song; Hongxing Jiang, Editor(s)

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