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Proceedings Paper

Realization of ultrafast and low-power all-optical switches using intersubband transitions in a novel InGaAs/AlAs/AlAsSb quantum well structure
Author(s): Teruo Mozume; Jun-ichi Kasai; Nikolai Georgiev; Takasi Simoyama; Achanta Venu Gopal; Haruhiko Yoshida
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Paper Abstract

We have dramatically improved the optical properties of extremely thin QWs required for ISBT devices operating at optical communication wavelengths using novel InGaAs/AlAs/AlAsSb QW structures with 4-7 monolayers (MLs) of AlAs. The intersubband saturation intensity (Is) was reduced to 3fj/μm2. This represented an Is reduction of nearly 3 orders of magnitude relative to the previous samples whether or not such sample featured 1 ML of AlAs interface layer. This paper reviews the recent results of novel InGaAs/AlAs/AlAsSb quantum well properties grown by molecular beam epitaxy, and discusses the linear and nonlinear optical responses of ISBT.

Paper Details

Date Published: 30 May 2003
PDF: 13 pages
Proc. SPIE 4992, Ultrafast Phenomena in Semiconductors VII, (30 May 2003); doi: 10.1117/12.475706
Show Author Affiliations
Teruo Mozume, Femtosecond Technology Research Association (Japan)
Jun-ichi Kasai, Femtosecond Technology Research Association (Japan)
Nikolai Georgiev, Femtosecond Technology Research Association (Japan)
Takasi Simoyama, Femtosecond Technology Research Association (Japan)
Achanta Venu Gopal, Femtosecond Technology Research Association (Japan)
Haruhiko Yoshida, Femtosecond Technology Research Association (Japan)


Published in SPIE Proceedings Vol. 4992:
Ultrafast Phenomena in Semiconductors VII
Kong-Thon F. Tsen; Jin-Joo Song; Hongxing Jiang, Editor(s)

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