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Proceedings Paper

Profile parameter accuracy determined from scatterometric measurements
Author(s): Rayan M. Al-Assaad; Emmanuel M. Drege; Dale M. Byrne
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Paper Abstract

As progress in ultra-large scale integration (ULSI) continues to lower the critical dimension (CD) requirements, measurement science is regularly witnessing changes in the monitoring techniques for the development and control of semiconductor fabrication processes. Microscopy, reflectometry and ellipsometry are examples of optical techniques constantly adjusted in attempts to provide mask and wafer state monitoring with non-invasive, rapid and in situ schemes. In the past years special attention has been devoted to optical diffraction as a potential method to satisfy those requirements, yielding the field of scatterometry. A linearized method was introduced to represent the relationship between parameters that describe a surface relief profile and the resulting scattering geometry data. An advantage of this approach is that describe a surface relief profile and the resulting scatterometric data. An advantage of this approach is that large databases containing profile information are not needed to process the scatterometric dat, resulting in a technique that is more versatile to process changes. In this paper, studies on the effect of changing profile parameters as well as measurement variables on the accuracy of retrieved parameter values using the linearized inversion method are presented.

Paper Details

Date Published: 12 July 2002
PDF: 12 pages
Proc. SPIE 4692, Design, Process Integration, and Characterization for Microelectronics, (12 July 2002); doi: 10.1117/12.475665
Show Author Affiliations
Rayan M. Al-Assaad, Univ. of Texas/Dallas (United States)
Emmanuel M. Drege, Univ. of Texas/Dallas (United States)
Dale M. Byrne, Univ. of Texas/Dallas (United States)

Published in SPIE Proceedings Vol. 4692:
Design, Process Integration, and Characterization for Microelectronics
Alexander Starikov; Alexander Starikov; Kenneth W. Tobin, Editor(s)

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