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Proceedings Paper

Developing an integrated imaging system for the 70-nm node using high numerical aperture ArF lithography
Author(s): John S. Petersen; James V. Beach; David J. Gerold; Mark John Maslow
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Paper Abstract

At its conception, 193 nm lithography was thought to be the best way to take optical lithography to the 180 nm node. It was expected that 193 nm could support the now-defunct 160 nm node before optical lithography would have to yield to an undetermined non-optical solution. Today, 193 nm must compete with 248 nm for the 130 nm node and is expected to support lithography until it is replaced by 157 nm at the 70 nm node. Given the challenges facing 157 nm, it is likely that lithographers will attempt to extend the utility of 193 nm to its theoretical limits.

Paper Details

Date Published: 12 July 2002
PDF: 14 pages
Proc. SPIE 4692, Design, Process Integration, and Characterization for Microelectronics, (12 July 2002); doi: 10.1117/12.475664
Show Author Affiliations
John S. Petersen, Petersen Advanced Lithography, Inc. (United States)
James V. Beach, International SEMATECH (United States)
David J. Gerold, Petersen Advanced Lithography, Inc. (United States)
Mark John Maslow, Petersen Advanced Lithography, Inc. (United States)


Published in SPIE Proceedings Vol. 4692:
Design, Process Integration, and Characterization for Microelectronics
Alexander Starikov; Kenneth W. Tobin; Alexander Starikov, Editor(s)

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