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Proceedings Paper

Two-mode interference photonic switch for WDM communications
Author(s): Baojun Li; Soo-Jin Chua
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Paper Abstract

A two-mode interference photonic switch with high carrier injection has been designed and fabricated based on free-carrier plasma dispersion effect. It consists of an input Y-branch single-mode ridge waveguide, a two-mode waveguide coupling section, and an output Y-branch single-mode ridge waveguide. The boron doped silicon-germanium material was grown by molecular beam epitaxy and the devices were fabricated by using standard silicon technology. The ridge waveguides were formed by reactive ion etching technique and the input and output facets of the waveguides were ground and polished by a mechanical method. The switch was characterized by using a 1310 nm InGaAsP/InP hetero-structure laser diode. Its insertion loss and On-state crosstalk were measured to be 2.74 and -15.5 dB, respectively, at a total switching current of 110 mA. The switching time is 180 ns and the fastest switching time is up to 30 ns.

Paper Details

Date Published: 11 July 2002
PDF: 9 pages
Proc. SPIE 4870, Active and Passive Optical Components for WDM Communications II, (11 July 2002); doi: 10.1117/12.475513
Show Author Affiliations
Baojun Li, IMRE, Singapore-MIT Alliance, and National Univ. of Singapore (Singapore)
Soo-Jin Chua, IMRE, Singapore-MIT Alliance, and National Univ. of Singapore (Singapore)


Published in SPIE Proceedings Vol. 4870:
Active and Passive Optical Components for WDM Communications II
Achyut Kumar Dutta; Abdul Ahad Sami Awwal; Niloy K. Dutta; Katsunari Okamoto, Editor(s)

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