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Proceedings Paper

Design and development of short- and long-wavelength MQW infrared vertical cavity surface emitting lasers
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Paper Abstract

The design, fabrication and performance of low threshold selectively oxidized infrared vertical cavity surface emitting lasers (VCSELs) for operation at 0.89μm and 1.55μm wavelengths using optimized graded Bragg mirrors, is reported. The devices are based on III-V ternary (AlGaAs/GaAs) and quaternary (AlInGaAs/GaInAsP/InP) graded semiconductor alloys and quantum wells and are grown by Molecular Beam Epitaxy. The VCSEL arrays are processed using inductively coupled plasma (ICP) etching with BCl3 gas mixtures to achieve vertical walls and small geometries, and the fabrication of the devices proceeds by using conventional Ohmic contacts (Ti-Pt-Au and Ni-Au-Ge-Ni) and indium tin oxide (ITO) transparent contacts. The theoretical investigation of the optical properties of the quaternary compound semiconductor alloys allows us to select the optimum materials for highly reflective Bragg mirrors with less periods. The simulation of the designed VCSEL performance has been carried out by evaluation of the important laser characteristics such as threshold gain, threshold current density and external quantum efficiency.

Paper Details

Date Published: 1 July 2003
PDF: 6 pages
Proc. SPIE 4999, Quantum Sensing: Evolution and Revolution from Past to Future, (1 July 2003); doi: 10.1117/12.475402
Show Author Affiliations
Agisilaos A. Iliadis, Univ. of Maryland/College Park (United States)
Aristos Christou, Univ. of Maryland/College Park (United States)


Published in SPIE Proceedings Vol. 4999:
Quantum Sensing: Evolution and Revolution from Past to Future
Manijeh Razeghi; Gail J. Brown, Editor(s)

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