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Proceedings Paper

5d-4f radiative transitions in Ce-doped Si3xAlxOyN4-y solid solutions
Author(s): B V Chernovetz; A V Feopentov; F F Grekov; S B Mikhrim; Alexander N. Mishin; Alexander S. Potapov
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Paper Abstract

For the first time the result of luminescent properties investigations of Ce doped Si3-xAlxOyN4-y solid solutions are presented. The interest of the sialon study is due to high radiation hardness and chemical stability of this system. The aims of Ce doping are: 1) the efficient phosphor creation, and 2) the investigation of the host matrix by using Ce as a control mark.

Paper Details

Date Published: 12 July 2002
PDF: 6 pages
Proc. SPIE 4766, XI Feofilov Symposium on Spectroscopy of Crystals Activated by Rare-Earth and Transition Metal Ions, (12 July 2002); doi: 10.1117/12.475328
Show Author Affiliations
B V Chernovetz, St. Petersburg State Technical University (Russia)
A V Feopentov, St. Petersburg State Technology Univ. (Russia)
F F Grekov, St. Petersburg State Technology Univ. (Russia)
S B Mikhrim, St. Petersburg State Technology Univ. (Russia)
Alexander N. Mishin, St. Petersburg State Technical Univ. (Russia)
Alexander S. Potapov, St. Petersburg State Technical Univ. (Russia)


Published in SPIE Proceedings Vol. 4766:
XI Feofilov Symposium on Spectroscopy of Crystals Activated by Rare-Earth and Transition Metal Ions

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