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Proceedings Paper

Er-related luminescence in Si:Er epilayers grown with sublimation molecular-beam epitaxy
Author(s): B. A. Andreev; Z. F. Krasil'nik; D. I. Kryzhkov; V. P. Kuznetsov; E. N. Morozova; V. B. Shmagin; M. V. Stepikohova; A. N. Yablonskii
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Paper Abstract

The intra-center 4f-shell transitions 4I13/2 yields 4I15/2 of Er3+ ion introduced into Si crystal under original Sublimation Molecular Beam Epitaxy (SMBE) process are investigated by low temperature photoluminescence spectroscopy with resolution down to 0.5 cm-1. Er-related optically active centers detected in SMBE Si:Er/Si structures are classified based on their spectroscopic features. The novel optically active Er- related center Er-1 specific for SMBE Si:Er/Si structures is identified. A novel type of Si:Er/Si structures namely selectively Er-doped multilayer structures with enhanced luminescence efficiency grown in SMBE process is demonstrated. The features of the energy transfer to Er3+ ions in SMBE Si:Er/Si structures as compared with ion implanted Si:Er/Si structures are discussed.

Paper Details

Date Published: 12 July 2002
PDF: 5 pages
Proc. SPIE 4766, XI Feofilov Symposium on Spectroscopy of Crystals Activated by Rare-Earth and Transition Metal Ions, (12 July 2002); doi: 10.1117/12.475319
Show Author Affiliations
B. A. Andreev, Institute for Physics of Microstructures (Russia)
Z. F. Krasil'nik, Institute for Physics of Microstructures (Russia)
D. I. Kryzhkov, Institute for Physics of Microstructures (Russia)
V. P. Kuznetsov, Novgorod State Univ. (Russia)
E. N. Morozova, Institute for Physics of Microstructures (Russia)
V. B. Shmagin, Institute for Physics of Microstructures (Russia)
M. V. Stepikohova, Institute for Physics of Microstructures (Russia)
A. N. Yablonskii, Institute for Physics of Microstructures (Russia)


Published in SPIE Proceedings Vol. 4766:
XI Feofilov Symposium on Spectroscopy of Crystals Activated by Rare-Earth and Transition Metal Ions

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